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STE145N65M5 Datasheet, PDF (1/13 Pages) STMicroelectronics – Low gate charge and input capacitance | |||
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STE145N65M5
N-channel 650 V, 0.012 Ω typ., 143 A MDmesh⢠M5
Power MOSFET in an ISOTOP package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS @ TJmax RDS(on) max.
ID
STE145N65M5
710 V
0.015 ⦠143 A
ï· Extremely low RDS(on)
ï· Low gate charge and input capacitance
ï· Excellent switching performance
ï· 100% avalanche tested
Applications
ï· Switching applications
Description
This device is an N-channel Power MOSFET
based on the MDmesh⢠M5 innovative vertical
process technology combined with the well-
known PowerMESH⢠horizontal layout. The
resulting product offers extremely low on-
resistance, making it particularly suitable for
applications requiring high power and superior
efficiency.
Order code
STE145N65M5
Table 1: Device summary
Marking
Package
145N65M5
ISOTOP
Packaging
Tube
November 2015
DocID025538 Rev 2
This is information on a product in full production.
1/13
www.st.com
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