STE145N65M5 Datasheet, PDF (4/13 Pages) STMicroelectronics – Low gate charge and input capacitance

Electrical characteristics
STE145N65M5
2
Electrical characteristics
T_C = 25 °C unless otherwise specified
Table 4: On/off states
Symbol
Parameter
Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA
650
V
IDSS Zero gate voltage drain current
VGS = 0 V,
VDS = 650 V
VGS = 0 V, VDS =
650 V, TC = 125 °C
10 µA
100 µA
IGSS Gate-body leakage current
VDS = 0 V,
VGS = ±25 V
±100 nA
VGS(th) Gate threshold voltage
VDS = VGS, ID = 250 µA 3
4
5
V
RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 69 A
0.012 0.015 Ω
Symbol
Parameter
Table 5: Dynamic
Test conditions
Ciss
Coss
Crss
Co(er)⁽¹⁾
Co(tr)⁽²⁾
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output capacitance
energy related
Equivalent output capacitance
time related
VDS= 100 V, f = 1 MHz,
VGS = 0 V
VGS = 0, VDS = 0 to 520 V
RG Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
f = 1 MHz, open drain
VDD = 520 V, ID = 69 A,
VGS = 10 V (see Figure
15: "Test circuit for gate
charge behavior")
Min. Typ. Max. Unit
- 18500 - pF
-
413
-
pF
-
11
- pF
-
415
-
pF
- 1950 - pF
-
0.7
-
Ω
-
414
- nC
-
114
- nC
-
164
- nC
Notes:
(1)_{Co(er) is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS}
increases from 0 to 80% VDSS
(2)_{Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases}
from 0 to 80% VDSS
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