STD96N3LLH6 Datasheet, PDF (7/15 Pages) STMicroelectronics – N-channel 30 V, 0.0037 Ω, 80 A, DPAK STripFET™ VI DeepGATE™ Power MOSFET

STD96N3LLH6
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
VGS
(V)
12
10
8
6
4
2
0
0
VDD=15V
ID=80A
AM03378v1
10 20 30 40 50 Qg(nC)
C
(pF)
AM03377v1
Ciss
1000
Coss
Crss
100
5 10 15 20 20 VDS(V)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.2
@250µA
AM03383v1
RDS(on)
(norm)
1.8
VGS=10V
ID=40A
AM03384v1
1.0
1.6
0.8
1.4
0.6
1.2
0.4
1.0
0.2
0
-55 -30 -5 20 45 70 95 120 145 TJ(°C)
0.8
0.6
-55 -30 -5 20 45 70 95 120 145 TJ(°C)
Doc ID 18432 Rev 1
7/15