STD96N3LLH6 Datasheet, PDF (6/15 Pages) STMicroelectronics – N-channel 30 V, 0.0037 Ω, 80 A, DPAK STripFET™ VI DeepGATE™ Power MOSFET

Electrical characteristics
STD96N3LLH6
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
ID
(A)
100
OpLeirm^aittieodn ^{binytmhisaxarReDaS(ison)}
AM03376v1
100µs
K
δ=0.5
0.2
0.1
280dpc
0.05
10
10^-1
1ms
0.02
Tj=175°C
1
Tc=25°C
10ms
0.01
Zth=k Rthj-c
δ=tp/τ
0.1
0.1
Sinlge
pulse
1
10
VDS(V)
10^{-2 Single pulse}
10^-5
10^-4
10^-3
10^-2
tp
τ
10^-1
tp(s)
Figure 4. Output characteristics
Figure 5. Transfer characteristics
ID
(A) VGS=10V
300
250
AM03379v1
ID
(A) VDS=2V
7V
300
6V
250
AM03380v1
200
5V
200
150
150
100
4V
100
50
3V
0
0
2
4
VDS(V)
50
0
0
2
4
6
8 VGS(V)
Figure 6. Normalized BV_DSS vs temperature Figure 7. Static drain source on resistance
BVDSS
(norm)
1.05
1.00
@250µA
AM03381v1
RDS(on)
(mΩ)
7
6
5
4
3
VGS=10V
AM03382v1
0.95
0.90
-55 -30 -5 20 45 70 95 120 145 TJ(°C)
2
1
0
0
10
20
30
40 ID(A)
6/15
Doc ID 18432 Rev 1