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STD96N3LLH6 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 30 V, 0.0037 Ω, 80 A, DPAK STripFET™ VI DeepGATE™ Power MOSFET
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STD96N3LLH6
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
Turn-on delay time
Rise time
VDD = 15 V, ID = 40 A,
RG = 4.7 Ω, VGS = 5 V
Figure 12
td(off)
tf
Turn-off delay time
Fall time
VDD = 15 V, ID = 40 A,
RG = 4.7 Ω, VGS = 5 V
Figure 12
Min. Typ. Max. Unit
19
-
91
ns
-
ns
24.5
ns
-
-
23.4
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 40 A, VGS = 0
ISD = 80 A,
di/dt = 100 A/µs,
VDD = 24 V
Figure 14
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
80 A
-
320 A
-
1.1 V
28.6
ns
- 22.8
nC
1.6
A
Doc ID 18432 Rev 1
5/15
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