STD96N3LLH6 Datasheet, PDF (1/15 Pages) STMicroelectronics – N-channel 30 V, 0.0037 Ω, 80 A, DPAK STripFET™ VI DeepGATE™ Power MOSFET

STD96N3LLH6
N-channel 30 V, 0.0037 Ω, 80 A, DPAK
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
STD96N3LLH6
V_DSS
30 V
R_DS(on) max
0.0042 Ω
I_D
80 A
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
– Automotive
Description
This product is an N-channel Power MOSFET that
utilizes the 6^th generation of design rules of ST’s
proprietary STripFET™ technology, with a new
gate structure. The resulting Power MOSFET
exhibits the lowest R_DS(on) in all packages.
3
1
DPAK
Figure 1. Internal schematic diagram
D (TAB or 2)
G(1)
Table 1. Device summary
Order codes
STD96N3LLH6
Marking
96N3LLH6
S(3)
AM01474v1
Package
DPAK
Packaging
Tape and reel
January 2011
Doc ID 18432 Rev 1
1/15
www.st.com
15