STD8NM50N Datasheet, PDF (7/19 Pages) STMicroelectronics – N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET in DPAK, TO-220 and IPAK packages

STD8NM50N, STP8NM50N, STU8NM50N
Electrical characteristics
Figure 8. Static drain-source on resistance Figure 9. Gate charge vs gate-source voltage
RDS(on)
(Ω)
AM07919v1
0.77
0.76
0.75
VGS=10V
0.74
0.73
0.72
0.71
0.7
0.69
0
1
2
3
4
5 ID(A)
VGS
(V)
12
VDS
10
8
VDD=400 V
ID=5 A
AM03195v1
400
350
300
250
6
200
150
4
100
2
50
0
0
0
5
10
15 Qg(nC)
Figure 10. Capacitance variations
Figure 11. Output capacitance stored energy
C
(pF)
AM07921v1
E
(μJ)
AM07922v1
1000
Ciss
2
100
Coss
10
Crss
1
0
1
10
100 VDS(V)
1
0
0 100 200 300 400 ⁵⁰⁰ VDS(V)
Figure 12. Normalized gate threshold voltage
vs temperature
VGS(th)
(norm)
AM07923v1
ID = 250 µA
Figure 13. Normalized on resistance vs
temperature
RDS(on)
(norm)
2.1
ID = 2.5 A
AM07924v1
1.00
1.7
0.90
1.3
0.80
0.70
-50 -25 0 25 50 75 100 TJ(°C)
0.9
0.5
-50 -25 0 25 50 75 100 TJ(°C)
Doc ID 17413 Rev 6
7/19