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STD8NM50N Datasheet, PDF (4/19 Pages) STMicroelectronics – N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET in DPAK, TO-220 and IPAK packages
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Electrical characteristics
2
Electrical characteristics
STD8NM50N, STP8NM50N, STU8NM50N
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
Parameter
Test conditions
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
Zero gate voltage
VDS = 500 V
drain current (VGS = 0) VDS = 500 V, TC = 125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
resistance
VGS = 10 V, ID = 2.5 A
Min. Typ. Max. Unit
500
V
1 µA
100 µA
± 100 nA
2
3
4
V
0.73 0.79 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
364
pF
-
33
- pF
1.2
pF
Equivalent output
Coss(eq)(1) capacitance time
related
VDS = 0 to 50 V, VGS = 0
- 147.5 - pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
5.4
-
Ω
Qg
Total gate charge
VDD = 400 V, ID = 5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 16)
14
nC
-
3
- nC
7
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/19
Doc ID 17413 Rev 6
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