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STD8NM50N Datasheet, PDF (1/19 Pages) STMicroelectronics – N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET in DPAK, TO-220 and IPAK packages
STD8NM50N, STP8NM50N, STU8NM50N
N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET
in DPAK, TO-220 and IPAK packages
Datasheet — production data
Features
Order codes VDSS@TJMAX RDS(on)max. ID
STD8NM50N
STP8NM50N
STU8NM50N
550 V
< 0.79 Ω 5 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
TAB
3
1
DPAK
TAB
3
2
1
TO-220
TAB
3
2
1
IPAK
Description
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Figure 1. Internal schematic diagram
$ 4!"
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3
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Table 1. Device summary
Order codes
STD8NM50N
STP8NM50N
STU8NM50N
Marking
8NM50N
Packages
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
September 2012
This is information on a product in full production.
Doc ID 17413 Rev 6
1/19
www.st.com
19