STD8NM50N Datasheet, PDF (5/19 Pages) STMicroelectronics – N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET in DPAK, TO-220 and IPAK packages

STD8NM50N, STP8NM50N, STU8NM50N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V_DD = 250 V, I_D = 5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 15)
Min.
-
Typ.
7
4.4
25
8.8
Max Unit
ns
ns
-
ns
ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 5 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5 A, di/dt = 100 A/µs
V_DD = 60 V (see Figure 20)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5 A, di/dt = 100 A/µs
V_DD = 60 V, T_j = 150 °C
(see Figure 20)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min.
-
-
-
-
Typ.
187
1.3
14
224
1.5
13
Max. Unit
5A
20 A
1.5 V
ns
µC
A
ns
µC
A
Doc ID 17413 Rev 6
5/19