STD80N6F6 Datasheet, PDF (7/15 Pages) STMicroelectronics – High avalanche ruggedness

STD80N6F6
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Normalized gate threshold voltage vs
temperature
C
AM17955v1
VGS(th)
AM17956v1
(pF)
(norm)
Ciss
1.2
ID=250µA
1
0.8
1000
0.4
Coss
Crss
100
0
20
40
60 VDS(V)
Figure 10. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2
ID=40A
AM17957v1
0.6
0.2
0
-75 -25 25 75 125
TJ(°C)
Figure 11. Normalized V_DS vs temperature
VDS
(norm)
1.1
ID=1mA
AM17958v1
1.5
1.05
1
1
0.5
0.95
0
-75 -25 25 75 125 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD (V)
AM17959v1
1
TJ=-50°C
0.8
0.6
TJ=150°C
TJ=25°C
0.4
0.2
0
0
20
40
60
80
ISD(A)
0.9
-75 -25 25 75 125 TJ(°C)
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