STD80N6F6 Datasheet, PDF (4/15 Pages) STMicroelectronics – High avalanche ruggedness

Electrical characteristics
2
Electrical characteristics
STD80N6F6
(T_CASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On/off states
Test conditions
Drain-source breakdown
V_{(BR)DSS voltage (VGS = 0)}
Zero gate voltage
I_DSS
Drain current (V_GS = 0)
Gate-body leakage
I_GSS
current (V_DS = 0)
V_GS(th) Gate threshold voltage
Static drain-source
R_{DS(on) on-resistance}
I_D = 250 μA
V_DS = 60 V
V_DS = 60 V, T_C=125 °C
V_GS = ± 20 V
V_DS = V_GS, I_D = 250 μA
V_GS = 10 V, I_D = 40 A
Min. Typ. Max. Unit
60
V
1 μA
100 μA
± 100 nA
3
4.5 V
4.4
5 mΩ
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V_DS = 25 V, f = 1 MHz,
V_GS = 0
V_DD = 30 V, I_D = 80 A,
V_GS = 10 V
Min. Typ. Max. Unit
- 8325 - pF
- 500 - pF
- 400 - pF
- 147 - nC
-
44
- nC
-
46
- nC
Symbol
Parameter
Table 6. Switching times
Test conditions
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V_DD = 30 V, I_D = 40 A
R_G = 4.7 Ω V_GS = 10 V
Min. Typ. Max. Unit
-
40
- ns
-
71
- ns
- 132 - ns
-
40
- ns
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