STD80N6F6 Datasheet, PDF (5/15 Pages) STMicroelectronics – High avalanche ruggedness

STD80N6F6
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max Unit
I_SD Source-drain current
-
(1)
I_SDM Source-drain current (pulsed)
-
(2)
V_SD
Forward on voltage
I_SD = 80 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
-
I_SD = 80 A, V_DD = 48 V
di/dt = 100 A/μs,
-
T_j = 150 °C
-
1. Current limited by package.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
80 A
320 A
1.3 V
46
ns
65
nC
2.8
A
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