STD80N6F6 Datasheet, PDF (3/15 Pages) STMicroelectronics – High avalanche ruggedness

STD80N6F6
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
V_DS
V_GS
(1)
I_D
(1)
I_D
(1)
I_DM
P_TOT
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
T_stg Storage temperature
T_j Operating junction temperature
1. Current limited by package
60
± 20
80
80
320
120
0.8
- 55 to 175
Symbol
Table 3. Thermal data
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-a Thermal resistance junction-ambient max
Value
1.25
50
Unit
V
V
A
A
A
W
W/°C
°C
Unit
°C/W
°C/W
DocID023471 Rev 2
3/15
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