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STD80N10F7 Datasheet, PDF (7/25 Pages) STMicroelectronics – Ultra low on-resistance
STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7
Electrical characteristics
Figure 8. Static drain-source on-resistance for Figure 9. Static drain-source on-resistance for
DPAK and TO-220
H2PAK-2
RDS(on)
(mΩ)
VGS=10V
AM18070v1
RDS(on)
(mΩ)
VGS=10V
AM15973v1
9.1
8.9
8.7
8.5
8.3
8.1
7.9
7.7
7.5
0
20
40
60
80
ID(A)
8.6
8.4
8.2
8.0
7.8
7.6
7.4
7.2
7.0
0
20
40
60
80
ID(A)
Figure 10. Static drain-source on-resistance for Figure 11. Gate charge vs gate-source voltage
TO-220FP
RDS(on)
(mΩ)
9.1
8.9
8.7
8.5
8.3
8.1
7.9
7.7
7.5
0
VGS=10V
5 10 15 20 25 30
AM15984v1
ID(A)
VGS
(V)
12
VDD=50V
ID=80A
AM15974v1
10
8
6
4
2
0
0 10 20 30 40 50 Qg(nC)
DocID025865 Rev 1
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