STD80N10F7 Datasheet, PDF (1/25 Pages) STMicroelectronics – Ultra low on-resistance

STD80N10F7, STF80N10F7,
STH80N10F7-2, STP80N10F7
N-channel 100 V, 0.008 Ω typ., 80 A STripFET™ VII DeepGATE™
2
Power MOSFETs in DPAK, TO-220FP, H PAK-2 and TO-220
Datasheet - production data
TAB
3
1
DPAK
TAB
2
3
1
H²PAK-2
3
2
1
TO-220FP
TAB
3
2
1
TO-220
Features
Order codes
V_DS @ R_DS(on)
T_Jmax max
STD80N10F7
0.01 Ω
STF80N10F7
0.01 Ω
100 V
STH80N10F7-2
0.0095 Ω
STP80N10F7
0.01 Ω
I_D
70 A
40 A
80 A
P_TOT
85 W
30 W
110 W
• Extremely low gate charge
• Ultra low on-resistance
• Low gate input resistance
Figure 1. Internal schematic diagram
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Applications
• Switching applications
Description
th
These devices utilize the 7 generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R_DS(on) in all
packages.
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Order codes
STD80N10F7
STF80N10F7
STH80N10F7-2
STP80N10F7
Table 1. Device summary
Marking
Package
80N10F7
DPAK
TO-220FP
2
H PAK-2
TO-220
Packaging
Tape and reel
Tube
Tape and reel
Tube
February 2014
This is information on a product in full production.
DocID025865 Rev 1
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