STD80N10F7 Datasheet, PDF (5/25 Pages) STMicroelectronics – Ultra low on-resistance

STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
-
80 A
(1)
I_SDM Source-drain current (pulsed)
-
320 A
(2)
V_SD Forward on voltage
I_SD = 80 A, V_GS = 0
-
1.1 V
t_rr Reverse recovery time
- 70
I_SD = 80 A, di/dt = 100 A/μs
ns
Q_rr Reverse recovery charge V_DD = 80 V, T_j=150 °C
- 125
nC
(see Figure 22)
I_RRM Reverse recovery current
- 3.6
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
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