STD80N10F7 Datasheet, PDF (4/25 Pages) STMicroelectronics – Ultra low on-resistance

Electrical characteristics
STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7
2
Electrical characteristics
(T_C = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
Min. Typ. Max. Unit
Drain-source
V_{(BR)DSS breakdown voltage}
I_D = 250 μA, V_GS = 0
100
V
Zero gate voltage
I_DSS
drain current (V_GS = 0)
Gate-body leakage
I_GSS
current (V_DS = 0)
V_GS(th) Gate threshold voltage
Static drain-source
R_{DS(on) on-resistance}
V_DS = 100 V
V_DS = 100 V, T_C=125 °C
V_GS = 20 V
V_DS = V_GS, I_D = 250 μA
for DPAK, TO-220 and
TO-220FP: I_D = 40 A, V_GS=10 V
2
for H PAK-2: V_GS=10 V, I_D=40 A
1 μA
100 μA
100 μA
2.5 3.5 4.5 V
0.0085 0.010 Ω
0.008 0.0095 Ω
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V_DS = 50 V, f = 1 MHz,
V_GS = 0
V_DD = 50 V, I_D = 80 A,
V_GS = 10 V
(see Figure 18)
Min. Typ. Max. Unit
- 3100 - pF
- 700 - pF
- 45 - pF
- 45 - nC
- 18 - nC
- 13 - nC
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V_DD = 50 V, I_D = 40 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 19 and Figure 22)
Min. Typ. Max. Unit
-
19
- ns
-
32
- ns
-
36
- ns
-
13
- ns
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