STD3PK50Z Datasheet, PDF (7/15 Pages) STMicroelectronics – P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH™ Power MOSFET in a DPAK package

STD3PK50Z
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
VGS
(V) _VDS
12
10
VDD=400V
ID=2.8A
AM11264v1
VDS (V)
400
350
300
C
(pF)
1000
8
250
6
200
150
4
100
2
50
0
0
0 5 10 15 20 25 30 Qg(nC)
100
10
1
0.1
1
10
100
AM11265v1
Ciss
Coss
Crss
VDS(V)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on-resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.10
ID=100µA
AM11266v1
RDS(on)
(norm)
2.5
ID=1.4A
VGS=10V
AM11267v1
1.00
2.0
0.90
0.80
0.70
-75 -25
25
75 125
TJ(°C)
Figure 12. Maximum avalanche energy vs
starting Tj
EAS
(mJ)
200
180
160
140
120
100
80
60
40
20
0
0
ID=2.8 A
VDD=50 V
AM11268v1
20 40 60 80 100 120 140 TJ(°C)
1.5
1.0
0.5
0
-75 -25
25
75
125
TJ(°C)
Doc ID 18280 Rev 2
7/15