STD3PK50Z Datasheet, PDF (3/15 Pages) STMicroelectronics – P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH™ Power MOSFET in a DPAK package

STD3PK50Z
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_D
I_DM ⁽¹⁾
P_TOT
I_AR
E_AS
dv/dt ⁽²⁾
Drain source voltage
Gate- source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Max current during repetitive or single pulse
avalanche (pulse width limited by T_jmax )
Single pulse avalanche energy
(starting T_J = 25 °C, I_D=I_AS, V_DD= 50 V)
Peak diode recovery voltage slope
ESD
Gate-source human body model
(R = 1,5 k, C = 100 pF)
T_j
Operating junction temperature
T_stg
Storage temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤ 2.8 A, di/dt ≤ 200 A/µs, V_Peak ≤V_(BR)DSS
Value
500
± 30
2.8
1.8
11
85
2.8
200
40
3
- 55 to 150
Unit
V
V
A
A
A
W
A
mJ
V/ns
kV
°C
Note:
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-pcb Thermal resistance junction-pcb max
Value
1.47
50
Unit
°C/W
°C/W
For the P-channel Power MOSFETs actual polarity of voltages and current has to be
reversed.
Doc ID 18280 Rev 2
3/15