STD3PK50Z Datasheet, PDF (1/15 Pages) STMicroelectronics – P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH™ Power MOSFET in a DPAK package

STD3PK50Z
P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH™
Power MOSFET in a DPAK package
Datasheet — production data
Features
Order code V_DSS R_DS(on)max I_D
P_TOT
STD3PK50Z 500 V < 4Ω 2.8 A 70 W
■ Gate charge minimized
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Very low intrinsic capacitance
■ Improved ESD capability
Applications
■ Switching applications
Description
This device is a P-channel Zener-protected Power
MOSFET developed using STMicroelectronics’
SuperMESH™ technology, achieved through
optimization of ST’s well established strip-based
PowerMESH™ layout. In addition to a significant
reduction in on-resistance, this device is designed
to ensure a high level of dv/dt capability for the
most demanding applications.
TAB
3
1
DPAK
Figure 1. Internal schematic diagram
or TAB
Table 1. Device summary
Order code
STD3PK50Z
Marking
3PK50Z
Package
DPAK
AM11279v1
Packaging
Tape and reel
Note:
For the P-channel Power MOSFETs actual polarity of voltages and current has to be
reversed.
August 2012
This is information on a product in full production.
Doc ID 18280 Rev 2
1/15
www.st.com
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