STD3PK50Z Datasheet, PDF (5/15 Pages) STMicroelectronics – P-channel 500 V, 3 Ω typ., 2.8 A Zener-protected SuperMESH™ Power MOSFET in a DPAK package

STD3PK50Z
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min. Typ. Max. Unit
16
ns
V_DD = 250 V, I_D = 1.4 A,
R_G=4.7 Ω, V_GS=10 V
-
(see Figure 13)
15
46
-
ns
ns
26
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
I_SD
I_SDM
V_SD(1)
t_rr
Q_rr
I_RRM
t_rr
Q_rr
I_RRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD= 2.8 A, V_GS=0
I_SD= 2.8 A, V_DD= 60 V
di/dt = 100 A/µs,
(see Figure 15)
I_SD= 2.8 A,V_DD= 60 V
di/dt=100 A/µs,
Tj=150 °C
(see Figure 15)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
2.8 mA
-
11.2 A
-
1.5 V
220
ns
- 1600
nC
14
A
280
ns
- 2100
nC
15
A
Note:
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BV_GSO Gate-source breakdown voltage Igs ± 1mA, (open drain) 30
-
V
The built-in back- to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
For the P-channel Power MOSFETs actual polarity of voltages and current has to be
reversed.
Doc ID 18280 Rev 2
5/15