STD35N3LH5 Datasheet, PDF (7/15 Pages) STMicroelectronics – Low gate drive power losses

STD35N3LH5
Electrical characteristics
Figure 8.
VGS
(V)
12
10
8
Gate charge vs gate-source voltage Figure 9. Capacitance variations
VDD=15V
ID=11A
AM09011v1
C
(pF)
1000
AM09012v1
Ciss
6
Coss
100
4
2
0
0
2
4
6
8 10 Qg(nC)
10
0.1
1
Crss
10
VDS(V)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
1.2
ID=250µA
AM09013v1
RDS(on)
(norm)
2.0
AM09014v1
1.0
1.8
0.8
1.6
0.6
0.4
0.2
0
-75 -25
25 75 125 175 TJ(°C)
1.4
1.2
1.0
0.8
0.6
-75 -25 25 75 125 175 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD
(V)
1.2
TJ=-55°C
AM09015v1
1.0
TJ=25°C
0.8
TJ=175°C
0.6
0.4
0.2
0
0 2 4 6 8 10 12 14 ISD(A)
Doc ID 16359 Rev 2
7/15