English
Language : 

STD35N3LH5 Datasheet, PDF (4/15 Pages) STMicroelectronics – Low gate drive power losses
◁
Electrical characteristics
2
Electrical characteristics
STD35N3LH5
(TCASE = 25 °C unless otherwise specified)
Table 5. Static
Symbol
Parameter
V(BR)DSS
Drain-source breakdown
voltage
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS= 0
30
V
VDS = Max rating,
VDS = Max rating,Tc = 125 °C
1 µA
10 µA
VGS = ±20 V
±100 nA
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 15 A
VGS= 4.5 V, ID= 15 A
1
2.5 V
12.5 16 mΩ
18 20 mΩ
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Coss
Crss
Qg
Qgs
Qgd
RG
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 27.5 V, f=1 MHz,
VGS=0
Total gate charge
Gate-source charge
Gate-drain charge
VDD= 15 V, ID = 19 A
VGS = 4.5 V
Figure 14
Intrinsic gate resistance
f = 1 MHz open drain
Min Typ. Max. Unit
713
pF
- 135 - pF
22
pF
5.4
nC
-
2
- nC
2.1
nC
- 3.3 - Ω
4/15
Doc ID 16359 Rev 2
 ▷