STD35N3LH5 Datasheet, PDF (3/15 Pages) STMicroelectronics – Low gate drive power losses

STD35N3LH5
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS Drain-source voltage (V_GS=0)
V_GS
I_D ⁽¹⁾
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
I_D
I_DM ⁽²⁾
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
T_j
Operating junction temperature
T_stg Storage temperature
1. The value is rated according R_thj-c
2. Pulse is rated according safe operating area
Table 3. Thermal resistance
Symbol
Parameter
R_thj-case Thermal resistance junction-case max
R_thj-pcb ⁽¹⁾ Thermal resistance junction-ambient max
1. When mounted on 1inch² FR-4 2Oz Cu board
Table 4. Avalanche data
Symbol
Parameter
I_AV
Not-repetitive avalanche current
E_AS
Single pulse avalanche energy
(starting T_J = 25 °C, I_D = I_AV, V_DD = 24 V)
Electrical ratings
Value
Unit
30
V
± 20
V
35
A
22
A
140
A
35
W
-55 to 175
°C
Value
4.3
50
Unit
°C/W
°C/W
Value
Unit
14
A
100
mJ
Doc ID 16359 Rev 2
3/15