STD35N3LH5 Datasheet, PDF (6/15 Pages) STMicroelectronics – Low gate drive power losses

Electrical characteristics
STD35N3LH5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3.
ID
(A)
100
10
OpLeimr^aittieodn
in
b^y
tmhi_asx^aRre^DaS(iosn)
AM09006v1
Tj=175°C
Tc=25°C
Single pulse
100µs
1ms
10ms
1
Thermal impedance
0.1
0.1
1
10
VDS(V)
Figure 4. Output characteristics
ID
(A)
VGS=10V
100
Figure 5.
AM09007v1
ID
(A)
100
Transfer characteristics
VDS=4V
AM09008v1
80
80
5V
60
60
4V
40
40
20
3V
0
0
1
2
3
4
VDS(V)
20
0
0
2
4
6
8 VGS(V)
Figure 6. Normalized B_VDSS vs temperature Figure 7. Static drain-source on resistance
BVDSS
(norm)
ID=1mA
AM09009v1
RDS(on)
(mΩ)
VGS=10V
AM09010v1
1.10
13
12
1.05
11
10
1.00
9
8
0.95
7
0.90
-75 -25 25 75 125 175 TJ(°C)
6
5
0 5 10 15 20 25 30 ID(A)
6/15
Doc ID 16359 Rev 2