STD25N10F7 Datasheet, PDF (7/21 Pages) STMicroelectronics – Ultra low on-resistance

STD25N10F7, STF25N10F7, STP25N10F7
Electrical characteristics
Figure 8. Output characteristics
ID (A)
80
70
60
VGS=10V
9V
8V
AM16008v1
50
7V
40
30
20
6V
10
5V
0
0 1 2 3 4 5 6 7 8 VDS(V)
Figure 9. Transfer characteristics
ID (A)
80
70
V_DS=6V
AM16009v1
60
50
40
30
20
10
0
2 3 4 5 6 7 8 9 10 11 VGS(V)
Figure 10. Gate charge vs gate-source voltage
VGS
AM16010v1
(V)
12
VDD=50V
ID=25A
10
8
6
4
2
Figure 11. Static drain-source on-resistance
RDS(on)
(mΩ)
0.096
VGS=10V
AM16011v1
40.0
30.0
20.0
10.0
0
0
5
10
15
Qg(nC)
0.0
0
5
10
15
20
ID(A)
Figure 12. Capacitance variations
Figure 13. Normalized gate threshold voltage vs
temperature
C
(pF)
1000
800
AM16012v1
Ciss
VGS(th)
(norm)
1.1
1
0.9
ID=250µA
AM16013v1
600
0.8
400
200
0
0
10 20 30 40 50 60 70 80
Coss
Crss
VDS(V)
0.7
0.6
0.5
0.4
-55 -30 -5 20 45 70 95 120 TJ(°C)
DocID025265 Rev 1
7/21
21