STD25N10F7 Datasheet, PDF (4/21 Pages) STMicroelectronics – Ultra low on-resistance

Electrical characteristics
STD25N10F7, STF25N10F7, STP25N10F7
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On/off states
Test conditions
Min. Typ. Max. Unit
Drain-source breakdown
V_{(BR)DSS voltage (VGS= 0)}
I_D = 250 μA
100
-
V
Zero gate voltage drain
I_{DSS current (VGS = 0)}
V_DS = 100 V
V_DS = 100 V; T_C = 125 °C
10 μA
100 μA
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ± 20 V
±100 nA
V_GS(th) Gate threshold voltage
V_DS = V_GS, I_D = 250 μA
2.5
4.5 V
Static drain-source
R_{DS(on) on- resistance}
V_GS = 10 V, I_D = 12.5 A
0.027 0.035 Ω
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 5. Dynamic
Test conditions
V_DS = 50 V, f = 1 MHz,
V_GS = 0
V_DD = 50 V, I_D = 25 A
V_GS = 10 V
Figure 18
Min. Typ. Max. Unit
- 920 - pF
- 215 - pF
- 19
-
pF
- 14
-
nC
-
7
- nC
-
3
- nC
4/21
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