STD25N10F7 Datasheet, PDF (5/21 Pages) STMicroelectronics – Ultra low on-resistance

STD25N10F7, STF25N10F7, STP25N10F7
Electrical characteristics
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
V_DD = 50 V, I_D = 12.5 A,
R_G = 4.7 Ω, V_GS = 10 V
Figure 17
Min. Typ. Max. Unit
- 9.8
-
ns
- 14
-
ns
- 14.8 -
ns
- 4.6
-
ns
Symbol
Table 7. Source-drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD Source-drain current
-
(1)
I_SDM Source-drain current (pulsed)
-
(2)
V_SD Forward on voltage
I_SD = 25 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
-
I_SD = 25 A,
di/dt = 100 A/μs,
-
V_DD = 80 V, T_j = 150 °C _-
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
25 A
100 A
1.1 V
38
ns
29
nC
1.7
A
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