STD25N10F7 Datasheet, PDF (1/21 Pages) STMicroelectronics – Ultra low on-resistance

STD25N10F7,
STF25N10F7, STP25N10F7
N-channel 100 V, 0.027 Ω typ., 25 A, STripFET™ VII DeepGATE™
Power MOSFET in DPAK, TO-220FP and TO-220 packages
Datasheet - production data
TAB
DPAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
Features
Order codes
STD25N10F7
STF25N10F7
STP25N10F7
V_DSS
100 V
100 V
100 V
R_DS(on)
max.⁽¹⁾
0.035 Ω
0.035 Ω
0.035 Ω
I_D
25 A
19 A
25 A
P_TOT
40 W
25 W
50 W
1. @ V_GS = 10 V
• Ultra low on-resistance
• 100% avalanche tested
Applications
• Switching applications
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Description
th
These devices utilize the 7 generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure. The resulting Power
MOSFET exhibits the lowest R_DS(on) in all
packages.
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Order codes
STD25N10F7
STF25N10F7
STP25N10F7
Table 1. Device summary
Marking
Package
25N10F7
25N10F7
25N10F7
DPAK
TO-220FP
TO-220
September 2013
This is information on a product in full production.
DocID025265 Rev 1
Packaging
Tape and reel
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