STD16N65M2 Datasheet, PDF (7/17 Pages) STMicroelectronics – Extremely low gate charge

STD16N65M2
Electrical characteristics
Figure 8. Static drain-source on-resistance
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Figure 10. Gate charge vs. gate-source voltage
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Figure 12. Output capacitance stored energy
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Figure 9. Normalized on-resistance vs.
temperature
RDS(on)
(norm)
GIPD180920141459FSR
2.2
VGS= 10V
1.8
1.4
1
0.6
0.2
-75 -25
25
75 125 Tj(°C)
Figure 11. Capacitance variations
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Figure 13. Source-drain diode forward
characteristics
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DocID027076 Rev 1
7/17
17