STD16N65M2 Datasheet, PDF (5/17 Pages) STMicroelectronics – Extremely low gate charge

STD16N65M2
Electrical characteristics
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
V_DD = 325 V, I_D = 5.5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 14 and 19)
Min.
-
-
-
-
Typ.
11.3
8.2
36
11.3
Max. Unit
-
ns
-
ns
-
ns
-
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
I_SD
I_SDM ⁽¹⁾
V_SD ⁽²⁾
Source-drain current
Source-drain current (pulsed)
Forward on voltage
V_GS = 0, I_SD = 11 A
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 11 A, di/dt = 100 A/µs
V_DD = 60 V (see Figure 16)
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 11 A, di/dt = 100 A/µs
V_DD = 60 V, T_j=150 °C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
11 A
-
44 A
-
1.6 V
- 342
ns
- 3.5
µC
- 20.4
A
- 458
ns
- 4.6
µC
- 20.5
A
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