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STD16N65M2 Datasheet, PDF (6/17 Pages) STMicroelectronics – Extremely low gate charge
Electrical characteristics
STD16N65M2
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
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Figure 3. Thermal impedance

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—V
—V
PV
PV
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Figure 4. Output characteristics
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Figure 5. Transfer characteristics
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Figure 6. Normalized gate threshold voltage vs. Figure 7. Normalized V(BR)DSS vs. temperature
temperature
VGS(th)
(norm)
1.1
GIPD180920141442FSR
ID = 250 µA
V(BR)DSS
(norm)
1.08
ID= 1mA
GIPD180920141448FSR
1.0
1.04
0.9
1.00
0.8
0.7
0.6
-75 -25
25
75 125 Tj(°C)
0.96
0.92
0.88
-75 -25
25
75 125 Tj(°C)
6/17
DocID027076 Rev 1