STD16N65M2 Datasheet, PDF (1/17 Pages) STMicroelectronics – Extremely low gate charge

STD16N65M2
N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2
Power MOSFET in a DPAK package
Datasheet − production data
Features
TAB
23
1
DPAK
Figure 1. Internal schematic diagram
, TAB
Order code V_DS @ T_Jmax R_DS(on) max I_D
STD16N65M2
710 V
0.36 Ω
11 A
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics, rendering
it suitable for the most demanding high efficiency
converters.
Order codes
STD16N65M2
AM15572v1
Table 1. Device summary
Marking
Package
16N65M2
DPAK
Packaging
Tape and reel
October 2014
This is information on a product in full production.
DocID027076 Rev 1
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