STBLED627 Datasheet, PDF (7/18 Pages) STMicroelectronics – Gate charge minimized

STBLED627, STDLED627
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
12
VDD=496V
ID=5.5A
VDS
10
8
6
4
AM09057v1
VDS(V)
500
400
300
200
2
100
Figure 9. Static drain-source on-resistance
RDS(on)
(Ω)
1.15
VGS=10V
AM09056v1
1.10
1.05
1.00
0.95
0.90
0
0
0
10
20
30 Qg(nC)
0.85
0 1 ^{2 3} 4 5 6 ID(A)
Figure 10. Capacitance variations
C
(pF)
AM09058v1
Figure 11. Output capacitance stored energy
Eoss
(µJ)
AM09059v1
1000
5
Ciss
4
100
3
Coss
10
Crss
1
0.1
1
10
100 VDS(V)
Figure 12. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.10
ID=50µA
AM09061v1
1.00
2
1
0
0 100 200 300 400 500 VDS(V)
Figure 13. Normalized on-resistance vs
temperature
RDS(on)
(norm)
AM09062v1
2.5
ID=2.8A
VGS=10A
2.0
0.90
0.80
0.70
-75 -25
25
75
125 TJ(°C)
1.5
1.0
0.5
0.0
-75 -25
25
75 125 TJ(°C)
DocID025173 Rev 1
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