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STBLED627 Datasheet, PDF (4/18 Pages) STMicroelectronics – Gate charge minimized
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Electrical characteristics
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On/off states
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 620 V
drain current (VGS = 0) VDS = 620 V, TC = 125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 50 µA
Static drain-source on-
resistance
VGS = 10 V, ID = 2.8 A
STBLED627, STDLED627
Min. Typ. Max. Unit
620
V
0.8 µA
50 µA
± 9 µA
3
3.6 4.5 V
0.95 1.2 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
pF
Ciss Input capacitance
-
890
- pF
pF
Coss
Output capacitance
VDS = 50 V, f = 1 MHz, VGS = 0 -
110
-
Crss
Reverse transfer
capacitance
-
18
-
Equivalent output
Coss(er)(1) capacitance energy
related
Equivalent output
Coss(tr)(2) capacitance time
related
-
28
- pF
VGS = 0, VDS = 0 to 480 V
-
63
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
3.5
-
Ω
Qg
Total gate charge
VDD = 496 V, ID = 5.5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 18)
-
35
- nC
-
4.5
- nC
-
23
- nC
1. It is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
2. It is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS
increases from 0 to 80% VDSS.
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