STBLED627 Datasheet, PDF (1/18 Pages) STMicroelectronics – Gate charge minimized

STBLED627,
STDLED627
N-channel 620 V, 0.95 Ω, 7.0 A Power MOSFET
in D²PAK and in DPAK
Datasheet - production data
Features
TAB
3
1
D²PAK
TAB
3
1
DPAK
Figure 1. Internal schematic diagram
D(2,TAB)
G(1)
S(3)
AM01476v1
Order codes
STBLED627
STDLED627
V_DSS
620 V
R_DS(on)
max.
< 1.2 Ω
I_D
P_w
7.0 A 90 W
• 100% avalanche tested
• Extremely high dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitance
• Improved diode reverse recovery
characteristics
• Zener-protected
Applications
• LED lighting applications
Description
These Power MOSFETs boast extremely low on
resistance and very good dv/dt capability,
rendering them suitable for buck-boost and
fyback topologies.
Order codes
STBLED627
STDLED627
Table 1. Device summary
Marking
Package
LED627
D²PAK
DPAK
Packaging
Tape and reel
August 2013
This is information on a product in full production.
DocID025173 Rev 1
1/18
www.st.com
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