STBLED627 Datasheet, PDF (5/18 Pages) STMicroelectronics – Gate charge minimized

STBLED627, STDLED627
Electrical characteristics
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Table 6. Switching times
Test conditions
V_DD = 310 V, I_D = 2.75 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 17)
Min.
-
-
-
-
Typ.
22
12
49
20
Max. Unit
-
ns
-
ns
-
ns
-
ns
Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
I_SD
I_SDM(1)
V_SD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
I_SD = 5.5 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 5.5 A, di/dt = 100 A/µs
V_DD = 60 V (see Figure 22)
t_rr
Reverse recovery time
Q_rr Reverse recovery charge
I_RR Reverse recovery current
I_SD = 5.5 A, di/dt = 100 A/µs
V_DD = 60 V, T_j = 150 °C
(see Figure 22)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
-
5.5 A
27 A
-
1.5 V
- 290
ns
- 1900
nC
- 13.5
A
- 335
ns
- 2400
nC
- 14.5
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
V_(BR)GSO
Gate-source breakdown
voltage (I_D = 0)
Igs = ± 1 mA
Min. Typ. Max. Unit
30
-
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
DocID025173 Rev 1
5/18