STB85NF55_09 Datasheet, PDF (7/15 Pages) STMicroelectronics – N-channel 55 V, 0.0062 Ω, 80 A, TO-220, D2PAK, I2PAK STripFET™ II Power MOSFET

STB/I/P85NF55
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
VGS
(V)
16
GC93660
C
(pF)
8000
GC93670
12
6000
8
4000
4
2000
0
0
30
60
90 120 Qg(nC)
0
10
20
30
40 VDS(V)
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
VGS(th)
(norm)
GC93680
RDS(on)
(norm)
GC93690
1.2
1.8
1.0
1.4
0.8
1.0
0.6
0.4
-50
0
50 100 TJ(°C)
Figure 12. Source-drain diode forward
characteristics
VSD
(V)
GC93700
1.2
0.6
0.2
-50
0
50 100
TJ(°C)
Figure 13. Normalized B_VDSS vs temperature
BVDSS
(norm)
1.10
GC93710
0.9
1.05
0.6
1.00
0.3
0
20
40
60
80 ISD(A)
0.95
0.90
-50
0
50 100 TJ(°C)
Doc ID 8405 Rev 9
7/15