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STB85NF55_09 Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 55 V, 0.0062 Ω, 80 A, TO-220, D2PAK, I2PAK STripFET™ II Power MOSFET
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STB/I/P85NF55
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS
ID (1)
ID(1)
IDM(2)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC=100 °C
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
EAS (4) Single pulse avalanche energy
TJ Operating junction temperature
Tstg Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
4. Starting TJ = 25 °C, ID = 40 A, VDD = 37.5 V
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max.
Rthj-amb Thermal resistance junction-ambient max.
Tl
Maximum lead temperature for soldering
purpose(1)
1. 1.6mm from case for 10sec
Electrical ratings
Value
55
± 20
80
80
320
300
2.0
10
980
-55 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Value
0.5
62.5
300
Unit
°C/W
°C/W
°C
Doc ID 8405 Rev 9
3/15
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