STB85NF55_09 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 55 V, 0.0062 Ω, 80 A, TO-220, D2PAK, I2PAK STripFET™ II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB/I/P85NF55
(T_CASE= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250 µA, V_GS= 0
55
V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating @125 °C
1 µA
10 µA
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20 V
±100 nA
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250 µA
2
3
4
V
R_DS(on)
Static drain-source on
resistance
V_GS= 10 V, I_D= 40 A
0.0062 0.008 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 15 V, I_D = 40 A
V_DS =25 V, f = 1 MHz,
V_GS = 0
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 60 V, I_D = 80 A
V_GS =10 V
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
-
120
S
3700
pF
-
900
pF
310
pF
120 ₁₅₀ nC
-
30
nC
45
nC
Table 6. Switching times
Symbol
Parameter
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V_DD= 30 V, I_D= 40 A,
R_G=4.7 Ω, V_GS=10 V
Figure 14 on page 8
Min. Typ. Max. Unit
25
ns
100
ns
-
-
70
ns
35
ns
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Doc ID 8405 Rev 9