STB85NF55_09 Datasheet, PDF (5/15 Pages) STMicroelectronics – N-channel 55 V, 0.0062 Ω, 80 A, TO-220, D2PAK, I2PAK STripFET™ II Power MOSFET

STB/I/P85NF55
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
I_SD Source-drain current
-
I_SDM(1) Source-drain current (pulsed)
-
V_SD(2) Forward on voltage
I_SD = 80 A, V_GS = 0
-
t_rr
Q_rr
I_RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I_SD = 80 A,
di/dt = 100 A/µs,
-
V_DD = 25 V, T_J = 150 °C
Figure 16 on page 8
80 A
320 A
1.5 V
75
ns
210
nC
5.5
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Doc ID 8405 Rev 9
5/15