STB7ANM60N Datasheet, PDF (7/20 Pages) STMicroelectronics – Low input capacitance and gate charge

STB7ANM60N, STD7ANM60N
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
12
10 ^VDS
8
6
4
VDD=480V
ID=5A
AM06479v1 _VDS
(V)
500
400
300
200
2
100
0
0
0 2 4 6 8 10 12 14 16 Qg(nC)
Figure 9. Static drain-source on resistance
RDS(on)
(Ohm)
0.88
VGS=10V
AM06480v1
0.86
0.84
0.82
0.80
0.78
0.76
0.74
0
1
2
34
5 ID(A)
Figure 10. Capacitance variations
C
(pF)
AM06481v1
Figure 11. Output capacitance stored energy
Eoss
(µJ)
AM06482v1
1000
2.5
Ciss
2.0
100
1.5
Coss
10
1
0.1
1
Crss
10
100 VDS(V)
Figure 12. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.10
ID=250µA
AM06483v1
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100
TJ(°C)
1.0
0.5
0
0 100 200 300 400 500 600 VDS(V)
Figure 13. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.1
ID=2.5A
AM06484v1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
DocID023350 Rev 2
7/20
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