STB7ANM60N Datasheet, PDF (3/20 Pages) STMicroelectronics – Low input capacitance and gate charge

STB7ANM60N, STD7ANM60N
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
V_DS
V_GS
I_D
I_D
(1)
I_DM
P_TOT
(2)
dv/dt
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
T_stg Storage temperature
T_j
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. I_SD ≤ 5 A, di/dt ≤ 400 A/μs, V_DD = 80% V_(BR)DSS, V_DS(Peak) < V_(BR)DSS
600
± 25
5
3
20
45
15
- 55 to 150
150
Unit
V
V
A
A
A
W
V/ns
°C
°C
Symbol
Table 3. Thermal data
Parameter
R_thj-case
(1)
R_thj-pcb
Thermal resistance junction-case max
Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4 board, 2oz Cu
Value
D²PAK
DPAK
2.78
35
50
Unit
°C/W
°C/W
Symbol
Table 4. Thermal data
Parameter
Avalanche current, repetitive or not-repetitive (pulse
I_{AR width limited by Tj max)}
Single pulse avalanche energy
E_AS
(starting T_j = 25°C, I_D = I_AR, V_DD = 50 V)
Value
Unit
2
A
119
mJ
DocID023350 Rev 2
3/20
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