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| STB7ANM60N Datasheet, PDF (1/20 Pages) STMicroelectronics – Low input capacitance and gate charge | |||
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STB7ANM60N,
STD7ANM60N
Automotive-grade N-channel 600 V, 5 A, 0.84 Ω typ., MDmesh⢠II
2
Power MOSFETs in D PAK and DPAK packages
Datasheet - production data
Features
TAB
2
3
1
D 2 PAK
TAB
3
1
DPAK
Order codes VDS @ Tjmax RDS(on) max. ID
STB7ANM60N
STD7ANM60N
650 V
0.9 Ω
5A
⢠Designed for automotive applications and
AEC-Q101 qualified
⢠100% avalanche tested
⢠Low input capacitance and gate charge
⢠Low gate input resistance
Figure 1. Internal schematic diagram
' Ä7$%
Applications
⢠Switching applications
Description
*
6
These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh⢠technology. This revolutionary Power
MOSFET associates a vertical structure to the
companyâs strip layout to yield one of the worldâs
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
$0Y
Order codes
STB7ANM60N
STD7ANM60N
Table 1. Device summary
Marking
Packages
7ANM60N
2
D PAK
DPAK
Packaging
Tape and reel
December 2013
This is information on a product in full production.
DocID023350 Rev 2
1/20
www.st.com
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