STB36NM60N Datasheet, PDF (7/18 Pages) STMicroelectronics – Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

STB36NM60ND, STW36NM60ND
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage
VGS
(V) _VDS
12
VDD=480V
ID=29A
AM08231v1
VDS
(V)
500
10
400
8
300
6
200
4
2
100
0
0
0 10 20 30 40 50 60 70 80 90 Qg(nC)
Figure 9. Static drain-source on-resistance
RDS(on)
(Ω)
0.102
VGS=10V
AM08232v1
0.100
0.098
0.096
0.094
0.092
0.090
0 ⁴ 8 ¹² 16 20 24 28 ID(A)
Figure 10. Capacitance variations
C
(pF)
AM08233v1
Figure 11. Output capacitance stored energy
Eoss
(µJ)
AM08234v1
10000
1000
100
10
1
0.1
1
Ciss
Coss
Crss
10
100 VDS(V)
16
14
12
10
8
6
4
2
0
0 100 200 300 400 500 600 VDS(V)
Figure 12. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.10
ID=250µA
AM08235v1
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 TJ(°C)
Figure 13. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.1
1.9
ID=14.5 A
VGS=10 V
AM08236v1
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-50 -25 0
25 50 75 100 TJ(°C)
DocID023785 Rev 3
7/18