STB36NM60N Datasheet, PDF (1/18 Pages) STMicroelectronics – Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

STB36NM60ND,
STW36NM60ND
Automotive-grade N-channel 600 V, 0.097 Ω typ., 29 A FDmesh™ II
Power MOSFETs (with fast diode) in D²PAK and TO-247 packages
Datasheet - production data
Features
TAB
3
1
D²PAK
3
2
1
TO-247
Figure 1. Internal schematic diagram
$4!"
'
3
!-V
Order codes
STB36NM60ND
STW36NM60ND
V_DSS @T_J
max.
650 V
R_DS(on)
max.
0.110 Ω
I_D
29 A
• Designed for automotive applications and
AEC-Q101 qualified
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
Applications
• Automotive switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
Order codes
STB36NM60ND
STW36NM60ND
Table 1. Device summary
Marking
Package
36NM60ND
D²PAK
36NM60ND
TO-247
October 2013
This is information on a product in full production.
DocID023785 Rev 3
Packaging
Tape and reel
Tube
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