STB36NM60N Datasheet, PDF (5/18 Pages) STMicroelectronics – Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

STB36NM60ND, STW36NM60ND
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions Min. Typ. Max. Unit
I_SD Source-drain current
I_SDM ⁽¹⁾ Source-drain current (pulsed)
-
V_SD ⁽²⁾ Forward on voltage
I_SD = 29 A, V_GS = 0
-
29 A
116 A
1.6 V
t_rr
Reverse recovery time
I_SD = 29 A, V_DD = 60 V
-
175
ns
Q_rr Reverse recovery charge
di/dt=100 A/µs
- 1.4
µC
I_RRM Reverse recovery current
(see Figure 18)
-
16
A
t_rr
Reverse recovery time
I_SD = 29 A,V_DD = 60 V
- 255
ns
Q_rr Reverse recovery charge
di/dt=100 A/µs,
T_J = 150 °C
- 2.6
µC
I_RRM Reverse recovery current
(see Figure 18)
-
20
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
DocID023785 Rev 3
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