STB36NM60N Datasheet, PDF (3/18 Pages) STMicroelectronics – Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

STB36NM60ND, STW36NM60ND
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
V_DS Drain-source voltage
600
V_GS Gate- source voltage
± 25
I_D
Drain current (continuous) at T_C = 25 °C
29
I_D
Drain current (continuous) at T_C = 100 °C
18
I_DM ⁽¹⁾ Drain current (pulsed)
116
P_TOT Total dissipation at T_C = 25 °C
190
dv/dt⁽²⁾ Peak diode recovery voltage slope
40
T_stg Storage temperature
- 55 to 150
T_J
Max. operating junction temperature
150
1. Pulse width limited by safe operating area
2. I_SD ≤ 29 A, di/dt ≤ 600 A/µs, V_DD = 80% V_(BR)DSS,V_DSPeak < V_(BR)DSS
Unit
V
V
A
A
A
W
V/ns
°C
Table 3. Thermal data
Symbol
Parameter
Value
D²PAK
TO-247
R_thj-case Thermal resistance junction-case max
R_thj-amb Thermal resistance junction-ambient max
R_thj-pcb(1) Thermal resistance junction-pcb max
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
0.66
50
30
Unit
°C/W
°C/W
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I_AR
Avalanche current, repetitive or not-
repetitive (pulse width limited by T_J max)
7
A
Single pulse avalanche energy
E_AS
(starting T_J = 25 °C, I_D = I_AR, V_DD = 50 V)
110
mJ
DocID023785 Rev 3
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