STB120N10F4 Datasheet, PDF (7/18 Pages) STMicroelectronics – Low gate charge

STB120N10F4, STP120N10F4
Electrical characteristics
Figure 8. Capacitance variations
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$0Y
&LVV
&RVV
&UVV
   9'69
Figure 10. Normalized gate threshold voltage vs
temperature
VGS(th)
(norm)
1.2
ID=250 µA
AM15508v1
1
0.8
0.6
0.4
0.2
-75 -25 25 75 125 TJ(°C)
Figure 12. Normalized V_(BR)DSS vs temperature
V(BR)DSS
(norm)
AM15510v1
1.15
ID=250 µA
1.1
1.05
1
0.95
0.9
0.85
-75 -25
25
75 125
TJ(°C)
Figure 9. Source-drain diode forward
characteristics
VSD
(V)
1
TJ=-50°C
AM15511v1
0.9
0.8
TJ=25°C
0.7
0.6
TJ=150°C
0.5
0 20 40 60 80 100
ISD(A)
Figure 11. Normalized on-resistance vs
temperature
RDS(on)
(norm)
2.5
VGS=10 V
ID=60 A
AM15509v1
2
1.5
1
0.5
0
-75 -25 25 75 125 TJ(°C)
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